| PART |
Description |
Maker |
| EC3H04C 1224 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| ENC270D-05B ENC390D-05B ENC470D-05B ENC560D-05B EN |
SMBus Accelerator (SMA); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
µP Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On Reset; Temperature Range: -40°C to 85°C; Package: 8-PDIP
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
5 Ld Voltage Supervisors with Adjustable Power-On Reset, Dual Voltage Monitoring or Watchdog Timer Capability; Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
STD MOV 性病检验手
|
TE Connectivity, Ltd.
ZF Electronics, Corp.
|
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| ATS45C ATS45CS3 |
LOW-VOLTAGE ULTRA-LOW-POWER TEMPERATURE SENSOR WITH HIGH OUTPUT DRIVE
|
Electronic Theatre Controls, Inc.
|
| EC3H01B |
VHF Band Low-Noise Amplifer and OSC Applications 甚高频波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor VHF Band Low-Noise Amplifer and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| EC3H06B |
UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| TCXO-490-FFJ-506 TCXO-490-DFG-206 TCXO-490-DFG-156 |
Temperature Compensated Crystal Oscillator Previous Vectron Model OSC
|
Vectron International, Inc
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| EL6201 |
Laser Diode Driver, HFM Osc 430MHz Min, 25mA Output, Low Power, 450MHz, with Disable
|
Intersil
|
| EC3H03B |
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4364 2SC4364-4 2SC4364-2 |
晶体管|晶体管|叩| 30mA的一c）|的SOT - 23VAR
VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications
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SANYO[Sanyo Semicon Device]
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